2SC2751 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 DESCRIPTION ·
- With TO-3N package
- High voltage ,high speed
APPLICATIONS
- For use in high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 7.5 A PC Collector power dissipation TC=25℃ 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10A ;IB=2A; L=50μH 400 V VCEsat Collector-emitter saturation voltage I C=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage I C=10A ;IB=2A 1.5 V ICBO Collector cut-off current V CB=400V; IE=0 100 μA ICEX Collector cut-off current VCE=400V; VBE(off)=-1.5V Ta=125℃ 100 1.0 μA mA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE-1 DC current gain I C=2A ; VCE=5V 15 80 hFE-2 DC current gain I C=5A ; VCE=5V 10 hFE-3 DC current gain I C=10A ; VCE=5V 7 Switching times ton Turn-on time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=10A;IB1=-IB2=2A RL=15Ω; VCC≈150V 0.7 μs hFE-1 Classifications N R O Y 15-30 20-40 30-60 40-80
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)