2SC2750 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, (J nc.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2750

DESCRIPTION

  • Collector-Emitter Sustaining Voltage- : VCEO(susr 100V(Min)
  • High Current Capability
  • High Power Dissipation

APPLICATIONS

  • Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 150 100 100 150 -55-150 UNIT V V V A A A W r
  • '"-'I |i "1' 2. COLLECT OR : '•-;' ill 1 3. EMITTER "V ^M • ,, 2 "3 TO-3PN package Vu:/ ittr f + . A H i i K t B -^ ^ C —- V*X-F~".*:S >'"^ i ' " ', \\— • j — -+-R DIM A B r D E F G H J K L N R S Lt Y mm MIN 19.60 15.50 4.70 0.90 1,90 3.40 2.90 3.20 0.595 20.00 1.90 10,89 4,90 3.35 1.995 5.90 9.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10.91 5.10 3.45 2.100 6.10 10.10 *- HB> G -*• -L
  • -- Q H^N-*- N.I Semi-Conductors reserves the right to change test conditions, parameter limits ami package dimensions \\vithout notice. Information furnished by N.I Semi-Conductors is believed to he holh accurate and reliable at the time ofuoinu to press. I loue\\er. N.I Semi-Conductors assumes no responsibility for ;iny errors or omissions discovered in its use. N I Semi-Comlucioi> encourages customers to verify that datasheets are cimvnl before placing orders. Quality Semi-Conductors

Silicon NPN Power Transistor 2SC2750

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) Vee(sat) ICBO ICER ICEX IEBO hpE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 50mA; IB1= 0 lc=10A; IB=1A lc= 10A; IB= 1A VCB=100V; IE 0 VCE= 100V; RBE= 50O ; Ta= 125 C VCE=100V;VBE<offr-1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125X VEB= 5V; lc 0 lc= 5A; VCE= 5V lc=10A;VCE=5V MIN 100 TYP. MAX 0.6 1.5 1.0 500 120 UNIT V V V M A mA M A M A Switching Times ton tstg tf Turn-on Time Storage Time Fall Time lc= 10A, lBi=-lB2= 1A, Vcc* 50V; RL= 5O 1.0 1.5 0.3 M S M s M s

  • hFE.i Classifications M 30-60 L 40-80 K 60-120