2SC2734-HF KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Collector Current Capability IC=50mA
  • Collector Emitter Voltage VCEO=11V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 11 Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE =∞ 11 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 3 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=5mA 0.7 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=5mA 1.2 DC current gain hFE VCE= 10V, IC= 5mA 20 200 Conversion gain CG VCC = 6 V, IC = 2 mA, f=900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz 15 Noise figure NF VCC = 6 V, IC = 2 mA, f=900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz 9 Oscillating output voltage VOSC VCC = 6 V, IC = 5 mA,f = 930 MHz 140 mV Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 1.5 pF Transition frequency fT VCE= 10V, IC= 10mA 1.4 3.5 GHz V V uA dB ■ Classification of hfe 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Type 2SC2734-GC-HF 2SC2734-R25-HF Range 20-200 100-200 Marking GC F R25. F NPN Transistors 2SC2734-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 15010050 Ambient Temperature Ta (bC) 150 100 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 20 50102 51 Collector Current IC (mA) 200 160 120 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE VCE = 10 V 20 50102 51 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (GHz) VCE = 10 V 20 50102 51 Collector to Base Voltage VCB (V) 2.0 1.6 1.2 0.8 0.4 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) f = 1 MHz IE = 0 20 50102 51 Collector to Base Voltage VCB (V) 2.0 1.6 1.2 0.8 0.4 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) f = 1 MHz Emitter Common 2 4 6 8 10 Collector Current IC (mA) Conversion Gain vs. Collector Current Conversion Gain CG (dB) VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) f out = 30 MHz NPN Transistors 2SC2734-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics 1 2 3 4 5 Collector Current IC (mA) Noise Figure vs. Collector Current Noise Figure NF (dB) VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) f out = 30 MHz 2 4 106 8 Collector Current IC (mA) 200 160 120 Oscillating Output Voltage vs. Collector Current Oscillating Output Voltage VOSC (mV) VCC = 6 V f = 930 MHz 2 4 106 8 Supply Voltage VCC (V) 200 160 120 Oscillating Output Voltage vs. Supply Voltage Oscillating Output Voltage VOSC (mV) IC = 5 mA f = 930 MHz 4 8 2012 16 Collector Current IC (mA) 2nd I.M. Distortion vs. Collector Current VCC = 10 V f1 = 600 MHz f2 = 650 MHz f2nd IM = 1,250 MHz Vout = 103 dBµ 40 8 2012 16 Collector Current IC (mA) 3rd I.M. Distortion vs. Collector Current VCC = 10 V f1 = 600 MHz f2 = 650 MHz f3rd IM = 550 MHz

700 MHz

Vout = 103 dBµ

550 MHz

f = 700 MHz 000,1004 500 600 700 800 900 Frequency fT (MHz) Power Gain vs. Frequency Power Gain PG (dB) VCC = 10 V IC = 10 mA Pin = –30 dBm NPN Transistors 2SC2734-HF