2SC2714-HF-3 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Collector Current Capability IC=20mA
  • Collector Emitter Voltage VCEO=30V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 Emitter - Base Voltage VEBO 4 Collector Current - Continuous IC 20 mA Collector Power Dissipation PC 100 mW Thermal Resistance from Junction to Ambient RθJA 1000 ℃/W Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 30 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 4 Collector-base cut-off current ICBO VCB= 18 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 4V , IC=0 0.5 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.4 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1.2 DC current gain hFE VCE= 6V, IC= 1mA 40 200 Noise Figure NF VCE= 6V, IE= -1mA,f=100MHz 2.5 5 dB Reverse Transfer capacitance Cre VCB= 6V, IE= 0,f=1MHz 0.7 pF Transition frequency fT VCE= 6V, IC= 1mA 550 MHz V uA V ■ Classification of hfe Type 2SC2714-R-HF 2SC2714-O-HF 2SC2714-Y-HF Range 40-80 70-140 100-200 Marking QR F QO F QY F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC2714-HF 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 011 0.01 0.1 0111.0 0.4 0.6 0.8 1.0 011 100 1000 0.1 0.1 0.1 0 1 2 3 4 5 6 7 8 PC — — Ta COLLECTOR POWER DISSIPATION PC (W) AMBIENT TEMPERATURE Ta ( )℃ β=10 VCEsat — — IC Ta=25℃ Ta=100℃ COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) 0.3 β=10 ICVBEsat — — Ta=100℃ Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) 2020 VCE=6V Ta=25℃ Ta=100℃ IChFE — — DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) f=1MHz IE=0 / IC=0 Ta=25℃ VCB / VEBCob / Cib — — Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) IC — — VCE=6V COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE(V) Ta=100℃ Ta=25℃ VBE COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) IB=4uA Static Characteristic 40uA 36uA 32uA 28uA 24uA 20uA 16uA 12uA 8uA NPN Transistors 2SC2714-HF