2SC2712 AITSEMI
Document overview
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Technical content
AiT Semiconductor Inc. www.ait-ic.com 2SC2712 GENERAL PURPOSE TRANSISTOR NPN 150mW 150mA 50V REV1.0 - AUG 2017 RELEASED - - 1 - DESCRIPTION FEATURES The 2SC2712 is available in SOT-23 package Low noise: NF=1dB(Typ.), 10dB(Max.) Complementary to 2SA1162 High Voltage and high Current High hEF linearity Available in SOT-23 package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23 2SC2712O 2SC2712Y 2SC2712G 2SC2712L Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products Audio frequency general purpose amplifier applications. PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com 2SC2712 GENERAL PURPOSE TRANSISTOR NPN 150mW 150mA 50V REV1.0 - AUG 2017 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VCBO, Collector-Base Voltage(IE=0) 60V VCEO, Collector-Emitter Voltage(IB=0) 50V VEBO, Emitter-Base Voltage(IC=0) 5V IC, Collector Current-Continuous 150mA PC, Collector Dissipation(TA =25°C)NOTE1 150mW TJ, TSTG, Junction and Storage Temperature -55°C ~150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Device is mounted on a printed circuit board.
ELECTRICAL CHARACTERISTICS
TA=25°C, unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC= 0.1mA, IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA,IC=0 5 - - V Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 uA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 uA DC Current Gain hFE VCE=6V, IC=2mA O 70 - 140 Y 120 - 240 G 200 - 400 L 350 - 700 Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz Output Capacitance Cob VCB=10V, IE=0, f=1kHz - 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA, f=1kHz - 1.0 10 dB
AiT Semiconductor Inc. www.ait-ic.com 2SC2712 GENERAL PURPOSE TRANSISTOR NPN 150mW 150mA 50V REV1.0 - AUG 2017 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SOT-23 (Unit: mm) Symbol Min Max A 2.85 2.95 B 1.25 1.35 C 1.0 TYP. D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1 TYP. K 2.35 2.45
AiT Semiconductor Inc. www.ait-ic.com 2SC2712 GENERAL PURPOSE TRANSISTOR NPN 150mW 150mA 50V REV1.0 - AUG 2017 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to ob tain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.