2SC2681 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2681
DESCRIPTION
- Collector-Emitter Breakdown Voltage- V(BR)CEo=115V(Min)
- Good Linearity of hFE
- Complement to Type 2SA1141
APPLICATIONS
- Audio frequency power amplifier
- High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 115 115 2.0 100 150 -55-150 UNIT V V V A A W 1 + j PIN 1. B.fl£E I I. COLLECTOR 3. EMITTER 2 ^ TO-3PN package 4+**..~v*, i i 1 * K i — C •*- , F- *-* > .., , ( ' V -*"* J
- - -*- R DIM A B r D E F G H J K L N R S U Y mm WIN 19.90 15.50 4,70 0.9Q 1.90 3.40 2.90 3.20 0.595 20.50 1,90 10.89 4.90 3,35 1.995 5.90 9.90 MAX 20.10 15.70 4.90 1.10 2,10 3.60 3.10 3,40 O.G05 20.70 2,10 10.91 5.10 3.45 2.005 6.10 10.10 *- -* G * *L
- --. D -*-N~*- N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. I louever. N,l Semi-Conductors assumes no responsibility for anv errors or omissions discovered in its use." N.I Scnii-C onduciois eiicmira.ucs customers to verily that datasheet'; are current before placing orders. Qualify Semi-Conductors
Silicon NPN Power Transistor 2SC2681
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcE(sat) VBE(OH) ICBO IEBO hpE-1 hFE-2 COB fi PARAMETER Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= 4.5A; IB= 0.45A lc= 4.5A; VCE= 2V VCB= 80V; IE= 0 VEB= 5V; lc= 0 lc= 1A;VCE=2V lc= 4.5A; Vce= 2V !E=O; VCB- 10V; f= 1.0MHz lc=1A;VCE=2V MIN TYP. 230 MAX 1.5 2.0 200 UNIT V V uA uA pF MHz E.-i Classifications R 60-120 Q 100-200