2SC2660 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
tSE.mi.-dondu.ctoi LP , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2660
DESCRIPTION
- Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min)
- Large Collector Power Dissipation
- Complement to Type 2SA1133
APPLICATIONS
- Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation Junction Temperature Storage Temperature Range VALUE 200 150 150 -55-150 UNIT V V V A A W r PIN <!' 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package Mi' U i Af I' 5- K T I c~l i - B H ^j -• v H F *0U ^ { .1 1- H c "w L VD ' h DIM A B C D F G H J K L Q R S U V mm WIN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10,20 4.50 0.90 3,70 5.18 2.90 0.60 13.40 1.4S 2.90 2.70 1.35 6.65 8.86
- •U j Rr NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Scmi-Conduetors is believed to he hoih accurate and reliable at the time ofgoint; in press I limewr. N.I Semi-Conductors assumes no responsibility lor anv errors or omissions discovered in its use. N.I Scmi-Conduclors eiicuuraiics- customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2660
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBEIOII) ICBO IEBO hpE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage, Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 5mA; IB= 0 lc= 500u A; IE= 0 IE= 500u A; lc= 0 lc= 500mA; IB= 50mA lc= 400mA; VCE= 10V VCB= 200V; IE= 0 VEB= 4V; lc= 0 lc=1 50mA; VCE= 10V lc= 400mA; VCE= 10V MIN 150 200 TYP. MAX 1.0 1.0 240 UNIT V V V V V MA u A
- hpE-1 Classifications Q 60-140 P 100-240