2SC2660 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A
DESCRIPTION
- With TO-220 package
- Complement to type 2SA1133/1133A
- High VCEO
- Large PC
APPLICATIONS
- Power amplifier applications
- TV vertical deflection applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V 2SC2660 150 VCEO Collector-emitter voltage 2SC2660A Open base 180 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=0.5A ;IB=50m A 1.0 V VBE Base-emitter on voltage I C=0.4A ; VCE=10V 1.0 V 2SC2660 150 V(BR)CEO Collector-emitter breakdown voltage 2SC2660A IC=5mA ;IB=0 180 V V(BR)CBO Collector-base breakdown voltage I C=0.5mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage I E=0.5mA ;IC=0 6 V ICBO Collector cut-off current V CB=200V;IE=0 50 µA IEBO Emitter cut-off current V EB=4V; IC=0 50 µA hFE-1 DC current gain I C=0.15A ; VCE=10V 60 240 hFE-2 DC current gain I C=0.4A ; VCE=10V 50 hFE-1 classifications Q P 60-140 100-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)