2SC2631 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 n Features l Satisfactory linearity of forward current transfer ratio hFE . l High collector to emitter voltage VCEO . l Small collector output capacitance Cob. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A 5.0–0.2 4.0–0.2 5.1–0.213.5–0.5 0.45 +0.2 –0.10.45 +0.2 –0.1 1.27 1.27 2.3–0.2 2.54–0.15 213 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 150 100 750 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol I CBO V CEO V EBO hFE * V CE(sat) fT C ob NV Conditions V CB = 100V, IE = 0 IC = 0.1mA, IB = 0 IE = 10mA, IC = 0 V CE = 5V , IC = 10mA IC = 30mA, IB = 3mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 150 130 typ 160 150 max 330 300 Unit mA V V V MHz pF mV *hFE Rank classification Rank R S hFE 130 ~ 220 185 ~ 330

PC — Ta I C — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 120 100 VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 300 250 200 150 100 VCB =10V f=100MHz Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)