2SC2624 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^£mi-L.onductoi L/^roducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2624
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Switching regulators
- Ultrasonic generators
- High frequency inverters
- General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VoEO(SUS) VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25-C Junction Temperature Storage Temperature Range VALUE 450 400 400 1.5 150 -55-150 UNIT V V V V A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.17 UNIT 'C/W PIN l.BASE 3. BETTER 1 % 3 TO-3PN package 4W...^ NjOii f • ! 5 K a — " — c -— y- ,...F— -s -^ • • ; -«.*-j - -— R DIM A B C D E F G H J K L H U R S U y mm MIN 19.60 15,50 4.70 0.90 1.90 3,40 2,90 3.20 0.595 20,00 1,90 10.89 4,90 3,35 1.995 5.90 9.90 MAX 20,10' 15,70 4,90 1.10 2.10 3.60 3,20 3.40 0,605 20.70 2.20 10.91 5.10 3,45 2.100 6.10 10.10 G * -L --• D
- *-N-i- N.I Senii-Couductors reserves the right to change test conditions, parameter limits anil package dimensions \\vithout notice. Information furnished hy N,l Semi-Conductors is believed to he both accurate and reliable at the time of go in i; 10 press. I louever. N.I Semi-O>nduetors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encouni.ues customers to verify thai datasheets are currenl before placing orders. Quality 5emi-Conductors
Silicon NPN Power Transistor 2SC2624
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcEO(SUS) V(BR)CBO V(BR)EBO VcE(sat) VeE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc= 10mA; IB= 0 lc=1A; IB=0 |c=1mA; !E=O IE= 0.1mA; lc= 0 lc= 2A; IB= 0.4A lc= 2A; IB= 0.4A VCB- 450V ; IE=0 VEB= 7V; lc=0 lc= 5A; VCE= 5V MIN 400 400 450 TYP. MAX 1.2 1.5 1.0 0.1 UNIT V V V V V V mA mA Switching times ton tstg tf Turn-on Time Storage Time Fall Time lc=4A, IB1= -lB2= 0.8A RL= 20O ;Pw=20u S Duty Cycle =S2% 1.0 2.0 1.0 u S M s M s