2SC2624 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2624
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V (BR)CEO= 400V(Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Switching regulators
- Ultrasonic generators
- High frequency inverters
- General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A IB B Base Current-Continuous 1.5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2624
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V ICBO Collector Cutoff Current VCB= 450V ; IE=0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA hFE DC Current Gain IC= 5A; VCE= 5V 10 Switching times ton Turn-on Time 1.0 μs tstg Storage Time 2.0 μs tf Fall Time IC= 4A , IB1= -IB2= 0.8A RL= 20Ω;PW=20μs Duty Cycle≤2% 1.0 μs isc Website：www.iscsemi.cn 2