2SC2608 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2608
DESCRIPTION
- With TO-3 package
- Complement to type 2SA1117
- High power dissipation
APPLICATIONS
- For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 17 A PC Collector power dissipation TC=25℃ 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2608 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ;IB=0 200 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 6 V VCE(sat) Collector-emitter saturation voltage I C=8A; IB=0.8A 2.0 V ICBO Collector cut-off current V CB=200V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=6V; IC=0 0.1 mA hFE DC current gain I C=8A ; VCE=4V 20 fT Transition frequency I C=1A ; VCE=12V 20 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2608 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)