2SC2594 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
»_/ ducts, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2594
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min)
- Good Linearity of hFE
- Low Collector Saturation Voltage
APPLICATIONS
- AF power amplifier
- For electronic flash unit
- Converter ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 150 -55-150 UNIT V V V A A W PIN 1. EMITTER 2. COLLECTOR s 3. BASE ; ; 3 TO-1 26 package r i i : f fj a i!" i G > 1 • 1 2 , DIM A B r D F G H J K O R V o f • *T A y ' K ~* n mm MEN MAX 10.70 10.S5 7.70 7,90 2.60 2.80 0,66 O.&S 3.10 3.30 4.48 4.68 2.00 2.20 1.35 1.56 1S.30 16.30 3.70 3.90 0.40 0.60 1,17 1,37 "-R N.I Semi-CoudiiLtors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Inronnation furnished hy N.I Semi-Conductors is believed to he both accurate and reliable at the time to press. I Kmever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N.I Scmi-l'(inductors encouiages eusliinicrs to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2594
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VcE(sat) ICBO IEBO hpE-1 hFE-2 fj COB PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 1mA; IB= 0 lE=10M A; lc- 0 lc=3A; IB=0.1A VCB= 10V; IE- 0 VEB= 7V; lc- 0 lc= 0.5A; VCE= 2V lc=1A;VCE=2V IE= -50mA; VCB= 6V le= 0; VCB= 20V, f,8St= 1MHz MIN 140 TYP. 150 MAX 1.0 0.1 0.1 450 UNIT V V V u A M A MHz PF