2SC2563 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2563
DESCRIPTION
- With TO-3P(I) package
- High power dissipation
APPLICATIONS
- For audio power amplifier and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A PT Total power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outlin e (TO-3P(I)) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2563 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ,IB=0 120 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ,IC=0 5 V VCE(sat) Collector-emitter saturation voltage I C=4A; IB=0.4A 2.0 V ICBO Collector cut-off current V CB=120V; IE=0 50 μA IEBO Emitter cut-off current V EB=5V; IC=0 50 μA hFE-1 DC current gain I C=1A ; VCE=5V 55 160 hFE-2 DC current gain I C=4A ; VCE=5V 35 fT Transition frequency I C=1A ; VCE=5V 90 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2563 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)