2SC2553 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2553

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(BR)CEo= 400V(Min)
  • Fast Switching Speed

APPLICATIONS

  • Switching regulator and high voltage switching applications.
  • High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Tc=25 C Junction Temperature Storage Temperature Range VALUE 500 400 150 -55-150 UNIT V V V A A w r

1 PIN

i i 1. BASE 2. COLLECT OR 3-adlTTER TO-220C package U A A "

  • * B M »j - V -IF ^ery -': * H * 1 K * i *\\t if C \\ — ] DIM A B D F G H J K L R S J V mm WIN 15,50 9.90 4.20 0.70 3.40 4.98 2.6S 0.44 IS. 00 1.20 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0,60 13.40 1.43 2.90 2.70 1.35 6.65 8.86 r — I
  • •r J N.I Scnii-Coi)ductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of doin to press. I loucvcr. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Power Transistor 2SC2553

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VeE(sat) ICBO IEBO hpe-1 hpE-2 PARAMETER Collector-Emitter Breakdown Voltage , Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc=10mA;lE=0 lc=1mA;lE=0 lc= 5A; IB= 1A lc= 5A; IB= 1A VCB= 400V; IE= 0 VEB= 7V; lc= 0 lc= 3A; VCE= 5V lc= 5A; VCE= 5V MIN 400 500 TYP. MAX 1.0 1.5 100 1.0 UNIT V V V V M A mA Switching times tr tstg tf Rise Time Storage Time Fall Time !BI= -IB2= 0.4A; RL=50n;Vcc- 200V 1.0 2.5 1.0 |J S u s u s