2SC2552 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, LJ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2552
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
- Fast Switching Speed
APPLICATIONS
- Switching regulator and high voltage switching applications.
- High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 500 400 0.5 150 -55-150 UNIT V V V A A W p rv i PIN 1. B.ASE 2. COLLECT OR 3. EMITTER TO-220C package t Mo' U A T . A » t -« B » -* V »r j-GT'y -'• * H 1 T i i * K » Jl I H < c i f DIM A B c D F G H f *•* K L Q R S U V F L D mm MIN 15.50 9.90 4.20 0.70 3.40 4.98 2, 68 0.44 13.00 1,20 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10 JO i.50 0.90 3.70 5.18 2.90 0.60 13.40 1,45 2.90 2.70 1.35 6.65 8.86 r — !
- • r J N.I Semi-Couduetors reserves the riglu to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Scini-Coiuluetors is believed to he both accurate and reliable at the time of to press. I louever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its us N.I Seiui-Couduelors encourages ciislomers In u-rit'v that datasheets are current before plaeinji orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2552
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VBE(sat) ICBO IEBO hFE-i hpE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 10mA; IB= 0 lc= 1rnA; IE= 0 IC=1A; IB=0.2A lc= 1A; IB= 0.2A VCB= 400V ; IE= 0 VEB= 7V; lc= 0 lc=0.1A;VCE=5V lc=1A;VCE=5V MIN 400 500 MAX 1.0 1.5 100 1.0 UNIT V V V V U A mA Switching times tr tstg tf Rise Time Storage Time Fall Time Vcc~ 200V, RL= 250H , lei= -lB2= 0.08A, 1.0 2.5 1.0 U s u s M s