2SC2552 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2552
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 400V(Min)
- Fast Switching Speed
APPLICATIONS
- Switching regulator and high voltage switching applications.
- High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A IB B Base Current-Continuous 0.5 A Total Power Dissipation @ Ta=25℃ 1.5 PC Total Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2552
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 400V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 Switching times tr Rise Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time VCC≈ 200V, RL= 250Ω, IB1= -IB2= 0.08A, 1.0 μs isc Website：www.iscsemi.cn 2