2SC2542_13 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
U <3E,mi-(~onaiictoi iJ-^ioauati, Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA Silicon NPN Power Transistors TELEPHONE: (973) 376-2922 (212) 227-6005 2SC2542
DESCRIPTION
- High voltage ,high speed switching
- High reliability
APPLICATIONS
- Switching regulators
- Ultrasonic generators
- High frequency inverters General purpose power amplifiers PINNING PIN
Collector;connected to mounting base Emitter W 1 2 3 Fig.1 simplified outline (TO-220C) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector Tc=25 VALUE 450 400 1.5 150 -45-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rthj-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VsE(sat) ICBO IEBO MFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS lc=10mA; IB=0 lc=1mA;lE=0 lE=0.1mA;lc=0 lc=2A; IB=0.4A lc=2A; IB=0.4A Vcs=450V ;IE=0 VEe=7V; lc=0 lc=2 A ; VCE=5V MIN 400 450 TYP. MAX 1.2 1.5 1.0 0.1 UNIT V V V V V mA mA Switching times *on ts tf Turn-on time Storage time Fail time lc=4A; IB1=0.8A lB2=-0.8A;RL=20n 1.0 2.0 1.0 us MS MS 2830^ leroo- 0.44+0.01