2SC2534 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2534 DESCRIPTION ·
- With TO-220C package
- High collector breakdown voltage : V CEO=400V(Min)
- Excellent switching time : t r=1.0μs(Max.) : t f=1.0μs(Max.
APPLICATIONS
- High speed high voltage switching applications
- Switching regulator applications
- High speed DC-DC converter applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A IB Base current 0.5 A Ta=25℃ 1.5 PC Collector dissipation TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2534 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage I C=0.5A; IB=50mA 1.0 V VBEsat Base-emitter saturation voltage I C=0.5A; IB=50mA 1.5 V ICBO Collector cut-off current V CB=400V ;IE=0 100 μA IEBO Emitter cut-off current V EB=6V; IC=0 1 mA hFE-1 DC current gain I C=0.1A ; VCE=5V 20 hFE-2 DC current gain I C=0.5A ; VCE=5V 20 Switching times tr Rise time 1.0 μs tstg Storage time 2.5 μs tf Fall time VCC=200V; IB1=-IB2=50mA;RL=400Ω Duty cycle≤1% 1.0 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2534 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2534