2SC2523 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2523
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- V(BR)CEo= 160V(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
- Complement to Type 2SA1073
APPLICATIONS
- High frequency power amplifier
- Audio power amplifiers
- Switching regulators
- DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25'C) PIN 1.BASE 2. SKITTER 3. COLLECT OR (CASE) TO-3 package SYMBOL VCBO VCEO VEBO Ic PC Tj Tslg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 160 160 120 150 -65-150 UNIT V V V A W DIM A B C D E _Ji_ H K L M a I «... v imii WIN MAX 3900 2530 ?80 o.so MO 26.8? S5C 1 10 1 60 10 92 S4& -X .10 1675
19 W"1
~430' 13.50 i?,{ji (962 420 3020 ""V'so" N,l Semi-C'oijdnctors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use. N.I Semi-Condiiclors encourages customers to verify (hat datasheets are current before placing orders. Quality -Semi-Conductors
Silicon NPN Power Transistor 2SC2523
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Breakdown Voltage' Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= 1mA; RBE= °° lc= 50u A; IE= 0 lE=50u A; lc=0 lc= 5A; IB= 0.5A lc= 5A; VCE= 5V VCB= 160V; IE=0 VCE=160V;RBE= °° VEB= 7V; lc= 0 lc= 1A; VCE= 5V lc= 7A; VCE- 5V lE=0;VCB=10V;f= 1.0MHz lc= 1A; VCE= 10V; f= 10MHz MIN 160 160 TYP. 180 MAX 1.8 1.7 200 UNIT V V V V V MA mA u A PF MHz Switching Times tr tstg tf Rise Time Storage Time Fall Time lc= 7.5A; IB1= -IB2= 0.75A; RL=4O 0.3 1.3 0.2 M s M s u s