2SC2523 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2523
DESCRIPTION
- With TO-3 package
- Complement to type 2SA1073
- Wide area of safe operation
APPLICATIONS
- High frequency power amplifier
- Audio power amplifiers
- Switching regulators
- DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 12 A PC Collector power dissipation TC=25℃ 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2523 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 160 V V(BR)CBO Collector-base breakdown voltage IC=50μA ;IE=0 160 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=5A ;IB=0.5A 1.8 V VBE Base-emitter on voltage I C=5A ; VCE=5V 1.7 V ICBO Collector cut-off current V CB=160V; IE=0 50 μA ICEO Collector cut-off current VCE=160V; RBE=∞ 1 mA IEBO Emitter cut-off current V EB=7V; IC=0 50 μA hFE-1 DC current gain I C=1A ; VCE=5V 60 200 hFE-2 DC current gain I C=7A ; VCE=5V 40 COB Output capacitance I E=0 ; VCB=10V;f=1MHz 300 pF fT Transition frequency I C=1A ; VCE=10V;f=10MHz 50 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2523 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)