2SC2522 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
I , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2522
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- V(BR)CEo= 120V(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
- Complement to Type 2SA1072
APPLICATIONS
- High frequency power amplifier
- Audio power amplifiers
- Switching regulators
- DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Tc=25 C Junction Temperature Storage Temperature Range VALUE 120 120 120 150 -65-150 UNIT V V V A W r PIN 1.BASE 2. SETTER 3. COLLECTOR (CASE) TO-3 package NJ Somi-CoiKluctors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy NJ Semi-Conductors is helieved to he both accurate and reliable at the lime of uoin U> press. I louever. N.I Seini-Conduetors assumes no responsibility for any errors or omissions discovered in its use. N.I Seini-t'oiuluclors encourages customers lo \\erily thai datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2522
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(on) ICBO ICED IEBO hpE-1 l*lFE-2 COB ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= 1mA; RBE- °° lc= 50u A; IE= 0 lE=50u A; lc=0 lc= 5A; IB= 0.5A lc= 5A; VCE= 5V VCB= 120V; IE= 0 VcE=120V;RBE= » VEB= 7V; lc= 0 lc= 1A; VCE= 5V lc= 7A; VCE= 5V lE=0;VCB=10V;f= 1.0MHz |c=1A;VCE=10V;f= 10MHz MIN 120 120 TYP. 180 MAX 1.8 1.7 200 UNIT V V V V V u A mA M A pF MHz Switching Times tr tstg tf Rise Time Storage Time Fall Time lc= 7.5A; lBi= -IB2= 0.75A; RL=4Q 0.3 1.3 0.2 M s |J S u s