2SC2522 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2522
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min)
- Fast Switching Speed
- Wide Area of Safe Operation
- Complement to Type 2SA1072
APPLICATIONS
- High frequency power amplifier
- Audio power amplifiers
- Switching regulators
- DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2522
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μ A; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μ A ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.8 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V 1.7 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 50 μ A ICEO Collector Cutoff Current VCE= 120V ;RBE= ∞ 1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μ A hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 7A; VCE= 5V 40 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 180 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; f= 10MHz 80 MHz Switching Times tr Rise Time IC= 7.5A; IB1= -IB2= 0.75A; RL= 4Ω 0.3 μ s tstg Storage Time 1.3 μ s tf Fall Time 0.2 μ s