2SC2516 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2516
DESCRIPTION
- Low Collector Saturation Voltage
APPLICATIONS
- Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25t: Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 2.5 1.5 150 -55-150 UNIT V V V A A A W PIN 1 BASE 2. COLLECTOR 3. EMITTER TO-220C package , T **Q U i 1 ' A y i * H I K T I c -. E - \\: 1 l- H c DIM A B r D F G H K L Q R S U V ,4, ry fT*"L V m MEN 15.50 9.90 4.20 0.70 3.40 4.98 2,68 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 m MAX 15.90 10.20 4. 50 0.90 3.70 5.18 2.90 0.60 13.40 1.43 2.90 2.70 1.35 6.65 8.86 *-s »}* J RH N.I Semi-Coi]ductors reserves the right lo change test conditions, paramotcr limits and package dimensions \\\\ithout noiico. Information furnished hy N.I Scmi-fondiictors is helieved lo he both accurate and reliahle at the time ofgoing lo press. I louever. \\.l Somi-Condnctors assumes no responsibility for anv errors or omissions discovered iu its use." N'.l Semi-Cuiidnctoi-s enanirages cnslomers lo \\crify that dntasheels are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2516
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(sat) ICBO ICER ICEX IEBO hpE-1 hpE-2 PARAMETER Collector-Emitter Sustaining Voltage • Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 50mA; IB= 0 lc= 3.0A; IB= 0.3A lc= 3.0A; IB= 0.3A VCB= 60V; IE= 0 VCE= 60V; RBE= 51 n , Ta=125 C VCE= 60V; VBE(off)= -1.5V VCE= 60V; VBE(0ff)= -1 -5V, Ta=125"C VEB= 5V; lc=0 lc= 0.3A; VCE= 5V lc= 3.0A; VCE= 5V MIN MAX 0.6 1.5 1.0 1.0 200 UNIT V V V u A mA u A mA u A Switching times ton Utg tf Turn-on Time Storage Time Fall Time lc=3.0A,RL=17n, !BI= -lB2= 0.3A,VCc~ 50V 0.5 3.0 0.5 u s u s u s hpE-2 Classifications M 40-80 L 60-120 K 100-200