2SC2516 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2516 DESCRIPTION ·
- With TO-220C package
- Low collector saturation voltage
- Wide area of safe operation
APPLICATIONS
- Switching regulators
- DC-DC converters
- High frequency power amplifiers PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 12 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A Ta=25℃ 1.5 PT Total power dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2516 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=3.0A ; IB=0;L=1mH 60 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.3A 0.6 V VBEsat Base-emitter saturation voltage I C=3A; IB=0.3A 1.5 V ICBO Collector cut-off current V CB=100V ;IE=0 10 μA ICEX Collector cut-off current VCE=100V; VBE=-1.5V Ta=125℃ 10 μA mA IEBO Emitter cut-off current V EB=10V ;IC=0 10 μA hFE-1 DC current gain I C=0.2 A ; VCE=5V 40 hFE-2 DC current gain I C=3 A ; VCE=5V 40 200 Switching times ton Turn-on time 0.5 μs ts Storage time 2.5 μs tf Fall time IC=3A; IB1=-IB2=0.3A RL=17Ω; VCC=50V 0.5 μs hFE-2 Classifications M L K 40-80 60-120 100-200
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2516 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)