2SC2507 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2507
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : Vceofsusr 400V(Min)
- Fast Switching Speed
- Collector-Emitter Saturation Voltage- tr 0.7V(Max.)@lc=10A
APPLICATIONS
- Designed for use in high-voltage, high-speed , power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as swit- ching regulator's, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB IBM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ Tc=25 C Junction Temperature Storage Temperature Range VALUE 500 400 200 150 -55-150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.625 UNIT °c/w ", PIN 1.BASE yS 2. BJIITTER h* 3 . CO LLECT 0 R (CAS E) I TO-3 package T T * IT- c M t «— — A *j 1 1 "f i : x^JTX / J «" tj •W'j <- A. j/ti 7X ^ T*' >^ / >X_^/ ' Wi^] Illill MM MIH MAX A 3900 B 25 30 3S.S7 ( 7 so e EC D OSsD 1 10 E 5 4(1 ,_ t 60 ^ 1092 H s^e K U.iaTj350 L 1675 17 OS K 19 «0 1962 Q 4 00 4 20 (i jQ'ai -$0 20 V 4 30 T" 4 50~ i SB t , B Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2507
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) ICBO ICEO IEBO hpE-1 hFE-2 fy PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 50mA; IB= 0 IC=10A; IB=1A lc= 10A; IB= 1A VCB= 500V; IE= 0 VCE= 320V; IB= 0 VEB= 7V; lc= 0 lc=10A;VCE=2V lc= 20A; VCE= 2V IC=1A;VCE=10V MIN 400 TYP. MAX 0.7 1.5 100 100 1.0 UNIT V V V M A M A mA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC=10A, lBi=-lB2=2A RL= 30 ; VBB2= 4V 1.0 3.0 0.7 u S M s (J S