2SC2507 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 400V(Min)
- Fast Switching Speed
- Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 10A
APPLICATIONS
- Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as swit- ching regulator’s, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 40 A IB B Base Current-Continuous 7 A IBM Base Current-Peak 14 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.625 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 320V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10A; VCE= 2V 15 hFE-2 DC Current Gain IC= 20A; VCE= 2V 8 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 20 MHz Switching times ton Turn-on Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC= 10A, IB1= -IB2= 2A RL= 3Ω; VBB2= 4V 0.7 μs isc Website：www.iscsemi.cn 2