2SC2497 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION ·

  • With TO-126 package
  • Complement to type 2SA1096/A
  • High collector to emitter voltage VCEO

APPLICATIONS

  • For low-frequency power amplification PINNING PIN DESCRIPTION

1 Emitter

2 Collector;connected to

3 Base

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V 2SC2497 50 VCEO Collector- emitter voltage 2SC2497A Open base V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3 A 1.2*1 PD Total power dissipation TC=25℃ 5*2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC2497 50 V(BR)CEO Collector-emitter breakdown voltage 2SC2497A IC=2mA ; IB=0 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 70 V VCEsat Collector-emitter saturation voltage I C=1.5A ;IB=0.15A 1.0 V VBEsat Base-emitter saturation voltage I C=1.5A ;IB=0.15A 1.5 V ICEO Collector cut-off current V CE=10V; IB=0 100 μA ICBO Collector cut-off current V CB=20V; IE=0 1 μA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE DC current gain I C=1A ; VCE=5V 80 220 COB Output capacitance I E=0 ; VCB=20V,f=1MHz 35 pF fT Transition frequency I E=0.5A ; VCB=5V,f=200MHz 150 MHz ‹ hFE Classifications R S 80-160 120-220

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s