2SC2497 PANASONIC
Document overview
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Technical content
2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features
- High collector to emitter voltage VCEO
- TO-126B package which requires no insulation plate for installa- tion to the heat sink I Absolute Maximum Ratings TC = 25°C 1 : Emitter 2 : Collector 3 : Base Unit: mm I Electrical Characteristics TC = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 70 V Collector to 2SC2497 V CEO 50 V emitter voltage 2SC2497A 60 Emitter to base voltage V EBO 5V Peak collector current I CP 3A Collector current I C 1.5 A Collector power dissipation P C 1.2 *1 W 5 *2 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 20 V, IE = 0 1 µA ICEO VCE = 10 V, IB = 0 100 µA Emitter cutoff current I EBO VEB = 5 V, IC = 0 10 µA Collector to base voltage V CBO IC = 1 mA, IE = 0 70 V Collector to emitter 2SC2497 V CEO IC = 2 mA, IB = 0 50 V voltage 2SC2497A 60 Forward current transfer ratio * hFE VCE = 5 V, IC = 1 A 80 220 Collector to emitter saturation voltage VCE(sat) IC = 1.5 A, IB = 0.15 A 1 V Base to emitter saturation voltage V BE(sat) IC = 1.5 A, IB = 0.15 A 1.5 V Transition frequency f T VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz Collector output capacitance C ob VCB = 20 V, IE = 0, f = 1 MHz 35 pF Rank R S hFE 80 to 160 120 to 220 8.0+0.5 –0.1 1.9±0.1 3.05±0.1 3.8±0.3 11.0±0.516.0±1.0 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Note) *: Rank classification
2SC2497, 2SC2497A VBE(sat) IC hFE IC fT IE PC Ta IC VCE VCE(sat) IC Cob VCB VCER RBE ICBO Ta 0 40 80 120 160 (1)With a 100×100×2mm Al heat sink (2)Without heat sink (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W) 1.0 3.0 2.0 4.0 3.5 2.5 1.5 0.5 01 2 21 0 48 6 TC=25˚C 45mA 40mA 30mA 35mA 20mA 25mA 10mA 5mA 15mA IB=50mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.03 0.1 0.3 0.01 0.03 0.1 0.3 1 3 IC/IB=10 –25˚C25˚C TC=100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.03 0.01 1 0.10.03 0.3 0.1 0.3 IC/IB=10 TC=–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 310.10.03 0.3 100 300 1000 VCE=5V TC=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB=5V f=200MHz T C=25˚C Emitter current IE (A) Transition frequency fT (MHz) 240 200 160 120 3 10 30 100 IE=0 f=1MHz T C=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 0.3 1 3 10 30 100 100 IC=10mA TC=25˚C Base to emitter resistance RBE (kΩ) Collector to emitter voltage VCER (V) 102 103 104 18014010060200 40 80 120 160 VCB=40V Ambient temperature Ta (˚C) ICBO (Ta) ICBO (Ta=25˚C)
2SC2497, 2SC2497A Area of safe operation (ASO) 0.001 0.003 0.1 0.3 0.01 0.03 0.1 0.3 1 3 10 30 100 Single pulse TC=25˚C t=10ms ICP IC t=1s 2SC2497A 2SC2497 Collector to emitter voltage VCE (V) Collector current IC (A)
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