2SC2481 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
J , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2481
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEO=150V(l\\/lin)
- High Current Capability •
- High Collector Power Dissipation
- Complement to Type 2SA1021
APPLICATIONS
- Color TV vertical deflection output applications.
- Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tslg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Tc=25 C Collector Power Dissipation @ Ta=25 'C Junction Temperature Storage Temperature Range VALUE 150 150 1.5 1.0 1.2 150 -55-150 UNIT V V V A A W r
- ^ PIN 1. EMITTER 2. COLLECTOR ; 3. BASE
- 2 ; TO-1 26 package h— B-- , , r t _ H T D-» Q a LT G >• i • * 2 3 DIM A B r D F G H J K R V Q T v ^~*1 T " A Ji K ~* f mm MIN 1070 7,70 2.60 0,66 3.10 4.48 1.00 -1..35 15.30 3,70 0.40 1.17 MAX 10.95 7,90 2..SO 0.36 3.30 4.68 2.20 1.55 16.30 3.90 LI..SO 1.37 t i i r-j *-R NJ Sani-Coiiductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy NJ Semi-Conductors is believed to he both accurate and reliable at the time of m>ini> lo press. I hmcver. N.I Seini-C'oiidiictors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Condiiclor-s entoura»es customers to \\erity (hat datasheets are current before placing orders. Quality 5emi-Conductors
Silicon NPN Power Transistor 2SC2481
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(on) ICBO IEBO HFE fr COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=10mA;lB 0 lc= 0.5A; IB= 50mA lc= 5mA; VCE= 5V VCB=150V; IE 0 VEB= 6V; I c 0 lc= 0.2A; VCE= 5V lc= 0.2A; VCE= 5V lE=0;VcB=10V,ftest=1MHz MIN 150 TYP. 100 MAX 1.5 0.8 1.0 1.0 320 UNIT V V V u A U A MHz PF Classifications R 60-120 100-200 Y 160-320