2SC2481 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2481
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 150V(Min)
- High Current Capability
- High Collector Power Dissipation
- Complement to Type 2SA1021
APPLICATIONS
- Color TV vertical deflection output applications.
- Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A IB B Base Current-Continuous 1.0 A Collector Power Dissipation @ TC=25℃ 20 PC Collector Power Dissipation @ T a=25℃ 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2481
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 5mA; VCE= 5V 0.8 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 μA hFE DC Current Gain IC= 0.2A; VCE= 5V 60 320 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V 20 100 MHz COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 13 pF hFE Classifications R O Y 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2