2SC2480 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Silicon NPN epitaxial planer type For high-frequency amplification / oscillation / mixing I Features

  • High transition frequency f T
  • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 30 V Collector to emitter voltage V CEO 20 V Emitter to base voltage V EBO 3V Collector current I C 50 mA Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage V CBO IC = 100 µA, IE = 03 0 V Emitter to base voltage V EBO IE = 10 µA, IC = 03 V Forward current transfer ratio h FE VCB = 10 V, IE = −2 mA 25 250 Base to emitter voltage V BE VCB = 10 V, IE = −2 mA 720 mV Transition frequency * fT VCB = 10 V, IE = −15 mA, f = 200 MHz 800 1 300 1 600 MHz Common emitter reverse transfer Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1 1.5 pF capacitance Crb VCE= 6 V, IC = 0, f = 1 MHz 0.8 pF Power gain PG V CB = 10 V, IE = −1 mA, f = 200 MHz 20 dB I Electrical Characteristics Ta = 25°C ± 3°C Marking Symbol: R Note) *: Rank classification Rank T S No-rank fT (MHz) 800 to 1 400 1 000 to 1 600 800 to 1 600 Marking symbol RT RS R Unit: mm 0.40+0.10 –0.05 (0.65) 1.50+0.25 –0.05 2.8+0.2 –0.3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 0.16+0.10 –0.06 0.4±0.2 10° 0 to 0.1 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Base JEDEC: TO-236 2: Emitter EIAJ: SC-59 3: Collector Mini Type Package Product of no-rank is not classified and have no indication for rank.

PC  Ta IC  VCE IC  IB IB  VBE IC  VBE hFE  IC VCE(sat)  IC 0 160 40 120 80 240 200 160 120 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 0 4 8 12 162 6 10 14 18 IB = 300 µA 50 µA 100 µA 150 µA 200 µA 250 µA Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C 0 500 400300200100 Base current IB (µA) Collector current IC (mA) VCE = 10 V Ta = 25°C 400 350 300 250 200 150 100 VCE = 10 V Ta = 25°C Base to emitter voltage VBE (V) Base current IB (µA) VCE = 10 V Ta = 75°C −25°C 25°C Base to emitter voltage VBE (V) Collector current IC (mA) 0.1 0.3 240 200 160 120 1 3 10 30 100 Ta = 75°C 25°C −25°C Forward current transfer ratio hFE VCE = 10 V Collector current IC (mA) 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 Ta = 75°C 25°C –25°C 1 600 1 400 1 200 1 000 800 600 400 200 Transition frequency fT (MHz) Emitter current IE (mA) VCB = 10 V Ta = 25°C 2.4 2.0 1.6 1.2 0.8 0.4 0.1 0.3 1 3 10 30 100 Common emitter reverse transfer capacitance Cre (pF) Collector to emitter voltage VCE (V) IC = 1 mA f = 10.7 MHz Ta = 25°C fT  IE Cre  VCE

Zrb  IE PG  IE NF  IE bib  gib brb  grb bfb  gfb bob  gob Reverse transfer impedance Zrb (Ω) 120 100 VCB = 10 V f = 2 MHz Ta = 25°C Emitter current IE (mA) Power gain PG (dB) VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C Emitter current IE (mA) Noise figure NF (dB) VCB = 10 V f = 100 MHz Rg = 50 Ω Ta = 25°C Emitter current IE (mA) −60 05 0 40302010 −10 −20 −30 −40 −50 Input conductance gib (mS) Input susceptance bib (mS) yib = gib + jbib VCB = 10 V f = 900 MHz IE = −2 mA −5 mA 300 500 600 200 −2.4 − 0.4 − 0.8 −1.2 −1.6 −2.0 f = 900 MHz IE = −5 mA −2 mA 300 500 600 200 Reverse transfer conductance grb (mS) Reverse transfer susceptance brb (mS) yrb = grb + jbrb VCB = 10 V −60 40 200−20−40 −2 mA 300 500 600 900 f = 200 MHz IE = −5 mA Forward transfer conductance gfb (mS) Forward transfer susceptance bfb (mS) yfb = gfb + jbfb VCB = 10 V −5 mA 300 500 600 900 f = 200 MHz IE = −2 mA Output conductance gob (mS) Output susceptance bob (mS) yob = gob + jbob VCE = 10 V