2SC2460 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
J <3£.mi-L,ondu.ctoi Lpioducti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC2460
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.)
- Complement to Type 2SA1050
APPLICATIONS
- Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25"C Junction Temperature Storage Temperature VALUE 140 140 100 150 -55-150 UNIT V V V A W f r PIN 1. 2. EMITTER 3. COLLECT OR (CASE) TO-3 package I [ 41—D i n L* V-. -JU- — U
- Ui t MM A B C D E H K L N Q V II11U MIN MAX 3900 25,30 780 O.SS t.40 S.67 S £C 1 10 1 60 1091' 546 ...iO 1675 19*0 400 ..JfiS^ 430 1350 1705 1962 420 J2»_. N.I Scmi-Cojuluctors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both ncainite and reliable at the time of jjoi In press. I louever, NJ Scmi-Condnctors assumes no responsibilit) for any errors or omissions discovered in its use N.I Semi-('nnduelors encourages customers to \\crify that datasheets are current before placing orders. Quality .Semi-Conductors
Silicon NPN Power Transistor 2SC2460
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO PIPE fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 30mA; IB= 0 lc= 1mA; IE= 0 IE= 1mA; lc=0 lc= 5A; IB= -0.5A VCB=140V; le=0 • VEB= 5V; lc= 0 lc=1A;VCE=5V lc=1A;VCE=10V MIN 140 140 TYP. MAX 2.0 240 UNIT V V V V MA M A MHz hFE Classifications R 55-110 O 80-160 Y 120-240