2SC2383TQ FS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

  1. 05. 10 Revision No : 0 1/2 2SC2383TQ

FEATURES

Silicon NPN transistor in a SOT-89 Plastic Package Color TV class B sound outputapplications SOT-89 G D A C H J B E 1 2 3 K F F D DIM MILLIMETERS A 4.70 MAX B 2.50 +_0.20 C 1.70 MAX D 0.45+0.15/-0.10 E 4.25 MAX F 1.50+_0.10 G 0.40 TYP H 1.7 MAX J 0.7 MIN K 0.5+0.15/-0.10 1. BASE 2. COLLECTOR 3. EMITTER Parameter Symbol Rating Unit Collector to Base Voltage VCBO 160 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 6.0 V Collector Current-Continuous IC 1.0 A Collector Base-Continuous IB 0.5 A Collector Power Dissipation PC 500 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector to Emitter Breakdown Voltage VCEO IC=10mA IB=0 160 V Collector Cut-Off Current ICBO VCB=150V IE=0 1.0 μA Emitter Base Cut-Off Current IEBO VEB=6.0V IC=0 1.0 μA DC Current Gain hFE VCE=5.0V IC=200mA 60 320 Collector to Emitter Saturation Voltage VCE(sat) IC=500mA IB=50mA 1.5 V Emitter to Base Saturation Voltage VBE VCE=5.0V IC=5.0mA 0.45 0.75 V Transition Frequency fT VCE=5.0V IC=200mA 20 100 MHz Collector Output Capacitance Cob VCB=10V IE=0 f=1.0MHz 20 pF Absolute Maximum Ratings(Ta=25℃) Electrical Characteristics(Ta=25℃)

  1. 05. 10 Revision No : 0 2/2 hFE Classifications Symbol hFERange Marking R O Y 60～120 100～200 160～320 H83R H83O H83Y Electrical CharacteristicCurve 2SC2383TQ : Ordering Method : 2SC2383TQ-R, 2SC2383TQ-O, 2SC2383TQ-Y