2SC2383-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC2383-HF ■ Features

  • High voltage: VCEO=160V
  • Large continuous collector current capability 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 160 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 160 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 150 V , IE= 0 1 Emitter cut-off current IEBO VEB= 6V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50mA 1 Base - emitter saturation voltage VBE(sat) IC= 500 mA, IB= 50mA 1.2 Base - emitter voltage VBE VCE= 5V, IC= 5mA 0.45 0.75 DC current gain hFE VCE= 6V, IC= 200mA 100 320 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 20 pF Transition frequency fT VCE= 5V, IC= 200mA 20 MHz V uA V ■ Classification of hfe Type 2SC2383-O-HF 2SC2383-Y-HF Range 100-200 160-320 Marking 2383O F 2383Y F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

www.kexin.com.cn2 Transistors NPN Transistors 2SC2383-HF ■ Typical Characterisitics 40 80 120 160 200 100 0.1 1 10 100 1000 200 400 600 800 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 0.1 1 10 100 1000 100 1000 0.1 1 10 100 1000 100 1000 0111.0 100 1000 0 200 400 600 800 1000 1200 0.1 100 1000 0 1 2 3 4 5 6 7 100 150 200 250 300 ICfT — — COMMON EMITTER VCE=5V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) β=10 ICVBEsat — — BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC — — Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 ICVCEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) IChFE — — Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 5V 3000 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib — — Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC — — VBE Ta=25℃Ta=100℃ COMMON EMITTER VCE=5V Static Characteristic COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.2mA 0.3mA 0.4mA IB=0.1mA