2SA1016_08 SANYO

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2SA1016, 1016K / 2SC2362, 2362K No.0572-1/5 Specifications ( ) : 2SA1016, 1016K Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions 2SA1016, 2SC2362 2SA1016K, 2SC2362K Unit Collector-to-Base Voltage V CBO (- -)120 (- -)150 V Collector-to-Emitter Voltage V CEO (- -)100 (- -)120 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)50 mA Collector Current (Pulse) I CP (- -)100 mA Collector Dissipation P C 400 mW Junction Temperature Tj 125 °C Storage Temperature Tstg - -55 to +125 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=(- -)80V, IE=0A (- -)1.0 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1.0 μA DC Current Gain h FE VCE=(- -)6V, IC=(- -)1mA 160* 960* Gain-Bandwidth Product f T VCE=(- -)6V, IC=(- -)1mA (110)130 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (2.2)1.8 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)10mA, IB=(- -)1mA (- -)0.5 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A [2SA1016K, 2SC2362K] (- -)150 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ [2SA1016, 2SC2362] (- -)100 V IC=(- -)1mA, RBE=∞ [2SA1016K, 2SC2362K] (- -)120 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Continued on next page. * : The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA hFE as follows : Rank F G H hFE 160 to 320 280 to 560 480 to 960 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1016, 1016K 2SC2362, 2362K PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp

Applications

2SA1016, 1016K / 2SC2362, 2362K No.0572-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Noise Level V NO(ave) VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz 35 mV Noise Peak Level V NO(peak) VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz 200 mV Package Dimensions unit : mm (typ) 7522-002 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector-to-Emitter V oltage, V CE -- V Collector Current, IC -- mA IC -- VCE Collector Current, IC -- mA ITR02951 --4 --2 --6 --8 --10 --12 --100μA --50μA ITR02952 01 0 2 0 3 0 4 0 5 0 IB=0μA --350 μA --150μA --200μA --250μA--300 μA 2SA1016, 1016K 100μA 50μA IB=0μA 150μA 200μA 250μA 2SC2362, 2362K 123 5.0 4.0 4.0 0.45 0.45 0.44 0.5 1.31.3 5.0 0.6 2.0 14.0 1 : Emitter 2 : Collector 3 : Base SANYO : NP

2SA1016, 1016K / 2SC2362, 2362K No.0572-3/5 Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz fT -- IC Collector Current, IC -- mA DC Current Gain, hFE hFE -- IC Collector Current, IC -- mACollector Current, IC -- mA DC Current Gain, hFE hFE -- IC Gain-Bandwidth Product, fT -- MHz fT -- IC Collector Current, IC -- mA Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF ITR02959 ITR02960 1.0--1.0 23 5 7 --10 23 5 2 3 5 7 10 100 23 5 7 1.0 1.0 2SA1016, 1016K f=1MHz 2SC2362, 2362K 1MHz ITR02957 ITR02958 --0.1 235 --1.0 235 --10 235 --100 0.1 23 5 1.0 23 5 10 22 35 100 1000 100 1000 100 2SA1016, 1016K VCE=--6V 2SC2362, 2362K VCE=6V ITR02955 ITR02956 1.0 5325732 10 100 37 5 1023 5 21.0 100 2SA1016, 1016K VCE=--6V 2SC2362, 2362K VCE=6V IB -- VBE IB -- VBE Base-to-Emitter V oltage, VBE -- V Base Current, IB -- μA Base-to-Emitter V oltage, VBE -- V Base Current, IB -- μA ITR02953 100 ITR02954 2SA1016, 1016K VCE=--5V --40 --20 --60 --80 --100 2SC2362, 2362K VCE=5V

2SA1016, 1016K / 2SC2362, 2362K No.0572-4/5 Signal Source Resistance, Rg -- Ω Contour of NF Collector Current, IC -- mA Signal Source Resistance, Rg -- Ω Contour of NF Collector Current, IC -- μA Signal Source Resistance, Rg -- Ω Contour of NF Collector Current, IC -- mA Signal Source Resistance, Rg -- Ω Contour of NF Collector Current, IC -- mA Signal Source Resistance, Rg -- Ω Contour of NF Collector Current, IC -- μA ITR02967 0.1k 1.0k 10k 100k 2SA1016, 1016K f=10kHz Δf=1Hz VCE=--6V NF= 0.5 dB 4dB2dB dB 6dB 8dB dB 0.7 dB 1dB 4dB 2dB 15dB 6dB8dB12dB 0.7 dB1dB 0.1 100 1.0 ITR02965 ITR02966 0.1k 1.0k 10k 100k 2SA1016, 1016K f=1kHz Δf=1Hz VCE=--6V 4dB2dB dB 6dB 8dB dB 0.7 dB 1dB 4dB 2dB 15dB 6dB8dB12dB 0.7dB 1dB 2SC2362, 2362K f=1kHz VCE=6V NF= 1dB NF= 1dB 4dB2dB 6dB 8dB 4dB 2dB 6dB 8dB 14dB 12dB ITR02963 ITR02964 35 1023 5 100023 5 10000235 10021.0 0.1 100 1.0 0.1k 1.0k 10k 100k 4dB2dB dB 6dB 8dB dB 2SA1016, 1016K f=100Hz Δf=1Hz VCE=--6V 4dB 2dB 1dB 1dB 15dB 6dB8dB12dB 2SC2362, 2362K VCE=6V f=10Hz NF= 1dB 4dB 2dB dB 6dB 8dB dB 4dB 2dB 14dB 6dB8dB 12dB NF= 0.7 dB Signal Source Resistance, Rg -- Ω Contour of NF Collector Current, IC -- mA Ambient Temperature, Ta -- °C PC -- Ta ITR02961 --0.001 --0.0123 5 --0.123 5 --1.0 --1023 5 23 5 75 125 100 1502505 0 200 500 100 400 300 ITR02962 2SA1016, 1016K f=10Hz Δf=1Hz VCE=--6V 0.1k 1.0k 10k 100k 4dB2dB dB 6dB 8dB dB NF= 1dB 4dB 2dB 15dB 6dB8dB12dB 2SA1016, 1016K 2SC2362, 2362K Collector Dissipation, PC -- mW

2SA1016, 1016K / 2SC2362, 2362K No.0572-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice.