2SA1016 SANYO
Document overview
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Technical content
Ordering number: EN 572D : . No.672D 28A1016,1016K/2SC 2362, 2362K Ss A'NYO PNP/N! PN Epitaxial Planar Silicon Transistors " High-Voltage Low-Noise Amp
Applications
( )32SA1016 ,1016K Absolute Maximum Ratings at T=25°C 2SA1016 ,2SC2362 2SA1016K,2SC2362K unit Collector to Base Voltage VcBO (-)120 (-)150 Vv Collector to Emitter Voltage VCEO (-) 100 (-)120 Vv Emitter to Base Voltage VEBO (-)5 Vv Collector Current Ic (-) 50 mA Collector Current(Pulse) Top (=) 100 mA Collector Dissipation Po 400 mW Junction Temperature Tj 125 °c Storage Temperature Tstg -55 to+125 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo ——- VeB=(-) 80V, IE=0 (-)1.0 4A Emitter Cutoff Current IEBO VeB=(-) 4V,I¢=0 (-)1.0 ywA DC Current Gain hrE Vog=(~)6V,Ic=(-)1mA 160* 960* Gain-Bandwidth Product fp Veg=(-) 6V,Ic=(-) lmA (39) MHz Output Capacitance Cob Vep= (-) 10V, £=1MHz (333) pF . 1.8 C-E Saturation Voltage Veg (sat) Ic=(-) LOmA,Ip=(-) 1mA (-)0.5 Vv C-B Breakdown Voltage \\WBRCBO Ic¢=(-) 102A, IE=0 (-) 120 Vv [AL016 ,C2362] Ic=(-) 1QA,Ip=0 (-) 150 Vv [A1016K ,C2362K] C-E Breakdown Voltage YBRCEO Ic=(-) lmA,RBE=00 (-)100 Vv [A1016 ,C2362] Ic=(-)1mA,Rgg=0 = (~) 120 v [ALO16K ,C2362K] E-B Breakdown Voltage ViBRIEBO IE=(-) 102A, Ic=0 (-)5 v Noise Level Wo(ave) Vec=30V,Ic=1mA,Rg=56kQ 1 35° mV VG=774B/1kHz Noise Peak Level Vwopeak) =" 7 " 200 mv * The 2SA1016,K / 2SC2362,K are classified by lmA hpg as follows : [We0_F 320 [200 E560 | 48d W960 Package Dimensions (unit: mm) 2003A 20 0.66 P| 045 tt 0.65, [sob — %.0 _| Leo JEDEC: TO-92 B. Base EIAJ : SC-43 Cc. Collector SANYO: NP” _E. Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3187AT/3075KI/1313KI No.572-1/4
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g NSN o> EN, YAAK po IXSSN SAAN i i RW RSS AA aN Nels Nn a NS Ow BREST § IRAN ERS @ "-0901 ~0.01 -0.1 S10 795 70 Collector Current,Ig - mA_ @ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. 1 Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, . _.No.572-4/4