2SC2361 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2361 DESCRIPTION ·
- With TO-220C package
- Complement to type 2SA1123
- Low collector saturation voltage
APPLICATIONS
- For power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 70 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 4 A PC Collector dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2361 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1 A; IB=0 70 V V(BR)EBO Emitter-base breakdown voltage I E=1m A; IC=0 6 V VCEsat Collector-emitter saturation voltage I C=4A; IB=0.4A 1.5 V VBE Base-emitter on voltage I C=3A ; VCE=4V 2.0 V ICBO Collector cut-off current V CB=100V; IE=0 10 μA IEBO Emitter cut-off current V EB=6V; IC=0 10 μA hFE DC current gain I C=2.5A ; VCE=3V 50 240 fT Transition frequency I C=0.5A ; VCE=10V 70 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2361 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)