2SC2358 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2358
DESCRIPTION
- With TO-3 package
- High voltage,high speed
APPLICATIONS
- Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A PT Total power dissipation T C=25 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.17 /W Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2358 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=10mA; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage I E=1m A;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=5 A;IB=1 A 1.5 V VBEsat Base-emitter saturation voltage I C=5 A;IB=1 A 1.5 V ICBO Collector cut-off current V CB=1000V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE DC current gain I C=5A ; VCE=5V 15
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2358 PACKAGE OUTLINE Fig.2 Outline dimensions