2SA1011P SANYO

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No.8522-1/4 Specifications ( ) : 2SA1011P Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (--)180 V Collector-to-Emitter Voltage V CEO (--)160 V Emitter-to-Base Voltage V EBO (--)6 V Collector Current I C (--)1.5 A Collector Current (Pulse) I CP (--)3 A Collector Dissipation P C Tc=25°C3 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)120V, IE=0A (- -)10 µA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0A (- -)10 µA DC Current Gain h FE VCE =(- -)5V, IC =(- -)300mA 60* 200* Gain-Bandwidth Product f T VCE =(- -)10V, IC =(- -)50mA 100 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (30)23 pF Base-to-Emitter Voltage V BE VCE =(- -)5A, IC =(- -)10mA (- -)1.5 V Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)500mA, IB=(- -)50mA (- -0.5)0.3 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)1mA, IE=0A (- -)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (--)160 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)1mA, IC =0A (- -)6 V Continued on next page. * : The 2SA1011P/2SC2344P are classified by 300mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62707DA TI IM TC-00000697 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1011P / 2SC2344P PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications

No.8522-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Turn-On Time t on See specified Test Circuit. (0.29)0.15 µs Storage Time t stg See specified Test Circuit. (0.48)0.81 µs Fall Time t f See specified Test Circuit. (0.19)0.48 µs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7507-001 IT02132 IC -- VCE Collector to Emitter V oltage, VCE -- V Collector Current, IC -- A --0.2 --0.4 --0.8 --0.6 --1.0 --0.8 --0.4 --1.2 --2.0 --1.6 --2.4 IT02134 IC -- VBE Base to Emitter V oltage, VBE -- V Collector Current, IC -- A IT02133 IC -- VCE Collector to Emitter V oltage, VCE -- V Collector Current, IC -- A 01 0 2 0 3 04 05 0 0.2 0.4 0.8 0.6 1.0 IT02135Base to Emitter V oltage, VBE -- V Collector Current, IC -- A 1.2 1.6 2.0 2.4 0.8 0.4 IC -- VBE --1mA --2mA --3mA --4mA --5mA --6mA --7mA --8mA IB =0mA 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA IB =0mA 2SA1011P 2SC2344P Ta= --25 °C125 75°C 2SA1011P V CE = --5V 2SC2344P V CE =5V °C125 75°C Ta= --25 10.2 5.1 4.5 1.3 15.114.0 2.7 6.3 3.6 18.0 (5.6) 2.7 1.2 0.8 0.4 2.55 2.55 123 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 200VR VCC =20V VBE =--2V 51Ω INPUT OUTPUT 40Ω 1µF1 µF PW=20 µs IB1 IB2 IC=10IB1=--10IB2=0.5A For PNP, minus sign is omitted.

No.8522-3/4 Collector to Emitter V oltage, VCE -- V A S O Collector Current, IC -- A IT02141IT02140 0.01 23 5 7 7 50.1 1.023 23 1.0 23 5 7 23 5 7 10 100 2 0.1 1.0 Collector Current, IC -- A VCE (sat) -- IC Collector to Emitter Saturation V oltage, VCE (sat) -- V IC / IB =10 2SA1011P 2SC2344P 0.1 0.01 1.0 1ms ms 100 ms DC operation IT02139 23 5 7 23 5 7 10 1001.0 100 Collector to Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF f=1MHz Gain-Bandwidth Product, fT -- MHz fT - - IC Collector Current, IC -- A 23 5 75723 1.00.01 0.1 23 5 70.001 100 V CE =10V IT02138 2SA1011P 2SC2344P 2SA1011P 2SC2344P (For PNP minus sign is omitted) (For PNP minus sign is omitted) (For PNP minus sign is omitted) (For PNP minus sign is omitted) ICP =3A IC =1.5A DC Current Gain, hFE IT02136 hFE -- IC Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE 1000 100 1.0 hFE -- IC IT02137 Ta= --25°C 25°C 125°C 75°C 2SA1011P V CE = --5V 1000 100 1.0 2SC2344P V CE =5V Ta= --25°C 25°C 125°C 75°C

No.8522-4/4PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice.