2SC2316 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconNPNPowerTransistor 2SC2316
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=80(V)(Min.)
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Series regulator,switchandgeneralpurpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEO Collector-EmitterVoltage 80 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 6 A PC TotalPowerDissipation @TC=25℃ 50 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconNPNPowerTransistor 2SC2316 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;IB=0 80 V VCE(sat) Collector-EmitterSaturationVoltage IC=3A;IB=60mA 1.0 V ICBO CollectorCutoffCurrent VCB=100V;IE=0 0.1 mA IEBO EmitterCutoffCurrent VEB=6V;IC=0 0.1 mA hFE DCCurrentGain IC=0.5A;VCE=4V 500 fT Current-Gain—BandwidthProduct IE=100mA;VCE=12V 30 MHz