2SC2307 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2307
DESCRIPTION
- With TO-3PN package
- High voltage ,high speed
APPLICATIONS
- For power switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 12 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2307 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=7A; IB=1.4A 0.5 V VBEsat Base-emitter saturation voltage I C=7A; IB=1.4A 1.3 V ICBO Collector cut-off current V CB=500V; IE=0 100 µA IEBO Emitter cut-off current V EB=7V; IC=0 100 µA hFE DC current gain I C=7A ; VCE=4V 10 fT Transition frequency I C=1A ; VCE=12V 18 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2307 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)