2SC2304 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2304
DESCRIPTION
- With TO-3 package
- High speed ,high voltage
- Wide area of safe operation
APPLICATIONS
- For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 12 A PT Total power dissipation T mb≤25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2304 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage I C=8A; IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage I C=8A; IB=1.6A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE-1 DC current gain I C=1A ; VCE=4V 15 50 hFE -2 DC current gain I C=10A ; VCE=4V 10 fT Transition frequency I C=1A ; VCE=10V 35 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2304 PACKAGE OUTLINE Fig.2 Outline dimensions