2SC2295-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • High transition frequency fT.
  • Complementary to 2SA1022-HF 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 30 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=1mA 0.2 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=1mA 1.2 DC current gain hFE VCE= -10V, IC= -1mA 70 220 Noise figure NF VCB = 10V, IE = –1mA, f= 5MHz 2.8 4 dB Reverse transfer impedance Zrd VCB = 10V, IE = –1mA, f= 2MHz 22 50 Ω Common emitter reverse transfer capacitance Cre VCE= 10V, IC= 1mA,f=10.7MHz 1.5 pF Transition frequency fT VCB= 10V, IE= -1mA,f=200MHz 150 250 MHz V nA V ■ Classification of hfe Type 2SC2295-B-HF 2SC2295-C-HF Range 70-140 110-220 Marking VB F VC F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC2295-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics PC IaT — C — VCE IC — I B IB — VBE IC — VBE VCE(sat) — I C hFE — I C fT — I E Zrb — I E 0410 6020 80 12040 100 250 200 150 100 225 175 125 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) 810 6 12 Ta=25˚C IB=100µA 80µA 60µA 40µA 20µA Collector to emitter voltage VCE (V) Collector current IC (mA) 0010 8020 6040 15.0 12.5 10.0 7.5 5.0 2.5 VCE=10V Ta=25˚C Base current IB (µA) Collector current IC (mA) 120 100 VCE=10V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (µA) VCE=10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC/IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE=10V Ta=75˚C 25˚C –25˚C Collector current IC (mA) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB=10V f=100MHz Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) VCB=10V f=2MHz Ta=25˚C Emitter current IE (mA) Reverse transfer impedance Zrb (Ω) NPN Transistors 2SC2295-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics Cre — VCE NF — I E bie — g ie bre — g re bfe — g fe boe — g oe 0.1 1 10 1000.3 3 30 3.0 2.5 2.0 1.5 1.0 0.5 f=10.7MHz Ta=25˚C IC=3mA 1mA Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) VCB=6V f=100MHz Rg=50Ω Ta=25˚C Emitter current IE (mA) Noise figure NF (dB) 040 328 2416 Vie=gie+jbie VCE=10V f=10.7MHz IE=–1mA –2mA –4mA –7mA 100 Input conductance gie (mS) Input susceptance bie (mS) – 0.6 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5 yre=gre+jbre VCE=10V f=10.7MHz IE=–1mA 100 Reverse transfer conductance gre (mS) Reverse transfer susceptance bre (mS) 0010 8020 6040 –120 –20 –40 –60 –80 –100 yfe=gfe+jbfe VCE=10V f=10.7MHz 100 10.7– 0.1mA –1mA –2mA IE=–4mA 100 100 Forward transfer conductance gfe (mS) Forward transfer susceptance bfe (mS) 1.2 1.0 0.8 0.6 0.4 0.2 yoe=goe+jboe VCE=10V f=10.7MHz IE=–1mA 100 Output conductance goe (mS) Output susceptance boe (mS) NPN Transistors 2SC2295-HF