2SC2295 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 n Features l Optimum for RF amplification of FM/AM radios. l High transition frequency fT. l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CEO C EBO IC PC Tj Tstg Ratings 200 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance Symbol ICBO hFE * fT NF Zrb C re Conditions V CB = 10V , IE = 0 V CB = 10V , IE = –1mA V CB = 10V , IE = –1mA, f = 200MHz V CB = 10V , IE = –1mA, f = 5MHz V CB = 10V , IE = –1mA, f = 2MHz V CE = 10V , IC = 1mA, f = 10.7MHz min 150 typ 250 2.8 0.9 max 0.1 220 1.5 Unit mA MHz dB W pF Marking symbol :V *hFE Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Marking Symbol VB VC
PC — Ta I C — V CE IC — IB IB — V BE IC — V BE V CE(sat) — IC hFE — IC fT — IE Zrb — IE 0 140 6020 80 12040 100 250 200 150 100 225 175 125 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 8 61 2 Ta=25˚C IB=100mA 80mA 60mA 40mA 20mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0 100 8020 60 40 15.0 12.5 10.0 7.5 5.0 2.5 VCE =10V Ta=25˚C Base current IB (mA) Collector current IC (mA ) 120 100 VCE =10V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB =10V f=100MHz Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) VCB =10V f=2MHz Ta=25˚C Emitter current IE (mA ) Reverse transfer impedance Zrb (W )
C re — V CE NF — IE bie — gie bre — gre bfe — gfe boe — goe 0.1 1 10 1000.3 3 30 3.0 2.5 2.0 1.5 1.0 0.5 f=10.7MHz Ta=25˚C IC =3mA 1mA Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) VCB =6V f=100MHz R g=50W Ta=25˚C Emitter current IE (mA ) Noise figure NF (dB) 04 0 3282 4 16 Vie=gie+jbie VCE =10V f=10.7MHz IE=–1mA –2mA –4mA –7mA 100 Input conductance gie (mS ) Input susceptance bie (mS ) – 0.6 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5 yre=gre+jbre VCE =10V f=10.7MHz IE=–1mA 100 Reverse transfer conductance gre (mS ) Reverse transfer susceptance bre (mS ) 0 100 8020 60 40 –120 –20 –40 –60 –80 –100 yfe=gfe+jbfe VCE =10V f=10.7MHz 100 10.7– 0.1mA –1mA –2mA IE=–4mA 100 100 Forward transfer conductance gfe (mS ) Forward transfer susceptance bfe (mS ) 1.2 1.0 0.8 0.6 0.4 0.2 yoe=goe+jboe VCE =10V f=10.7MHz IE=–1mA 100 Output conductance goe (mS ) Output susceptance boe (mS )