2SC2293 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Jzii.su f^£mi-L.oncmctoi LJ^ 10 clucks., Una, C^ fc/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 2SC2293
DESCRIPTION
- High Collector-Emitter Sustaining Voltage- : VCEO(sus)= 400V (Min)
- High Switching Speed
APPLICATIONS
- Power switching
- Power amplification
- Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25'C) THERMAL CHARACTERISTICS SYMBOL VCBO VCEO VEBO Ic ICM IB IBM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25C Junction Temperature Storage Temperature Range MAX 500 400 100 150 -55-150 UNIT V V V A A A A W SYMBOL Rih j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT r/w PIN 1. BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package ?pt. L <t-$\\i MM A B C D H K L N __& U v nun MIH MAX 3300 25 30 ? 80 090 1 40 X.B7 _Mi_ 1 10 r 1 60 ! 0.92 54$ -MD 1675 19*01 400 1 30.00_1 4.JJ 13.50 17.05 196^ 420 30 'JO 450 NJ SemK'oniluctors reserves the right to change test conditions, parameter limits and ptickiige dimensions without iHitiee. Inrbrinntion tiimished by NJ Somi-Conductors is believed to he both iiceurnte niul reliable at the time of going to press, llouever, N.I Semi-Conductors assumes no responsibili(> lor any errors or omissions discovered in its use." N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2293
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) hpE-1 hFE-2 ICBO ICEO IEBO fr PARAMETER Collector-Emitter Sustainig Voltage i Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain DC Current Gain Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Current-Gain—Bandwidth Product CONDITIONS lc= 50mA; IB= 0 lc= 5A; IB= 0.5A lc= 5A; IB= 0.5A lc= 5A; VCE= 2V lc=10A;VCE=2V VCB= 500V; IE= 0 VCE= 400V; IB= 0 VEB= 7V; lc= 0 lc= 1A; VCE= 10V MIN 410 TYP. MAX 0.7 1.5 0.1 0.1 1.0 UNIT V V V mA mA mA MHz Switching Times ton tstg tf Turn-On Time Storage Time Fall Time IC=5A;IB1=-IB2=1A; RL= 5n ; VBB2= 4V 1.0 3.0 0.7 M s M s M s