2SC2293 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2 S C 2 2 9 3
DESCRIPTION
- High Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 400V (Min)
- High Switching Speed
APPLICATIONS
- Power switching
- Power amplification
- Power driver ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2 S C 2 2 9 3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 200mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V hFE-1 DC Current Gain IC= 5A; VCE= 2V 15 hFE-2 DC Current Gain IC= 10A; VCE= 2V 8 ICBO Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 20 MHz Switching Times ton Turn-On Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC= 5A; IB1=- IB2= 1A; RL= 5Ω; VBB2= 4V 0.7 μs isc Website：www.iscsemi.cn