2SC2292 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Lpiodwzki, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC2292
DESCRIPTION
- High Collector-Emitter Sustaining Voltage- : VcEoisusr 400V (Min)
- High Switching Speed
APPLICATIONS
- Power switching
- Power amplification
- Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB IBM PC i stg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25"C Junction Temperature Storage Temperature Range MAX 500 400 150 -55-150 UNIT V . V V A A A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.56 UNIT "C/W PIN I. BASE 2. BETTER 3. COLLECT OR (CASE) TO-3 package J - 1 , I ^-TT DIM A C D E _ji H K L N P ,-iL, V inin WIN 25 W 780 0.90 MO MAX 26.6? S 5C 1 10 1 60 1092 54fr ii.iO 1675 19 *0 ™_p 13SO 1705 1962 420 3020 450 N.I Scini-Conduttors reserves the right to change test conditions, parameter limits mid pnckiige dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he hath accurate and reliable at the time of goinu to press. I limever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in ils use. N.I Semi-Conductors eneoura.ues customers to \\erify thai datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC2292
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(sat) hFE-1 hFE-2 ICBO ICEO IEBO fr PARAMETER Collector-Emitter Sustainig Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain DC Current Gain Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Current-Gain — Bandwidth Product CONDITIONS lc= 50mA; IB= 0 lc= 4A; IB= 0.4A lc= 4A; IB= 0.4A lc= 4A; VCE= 2V lc= 8A; VCE= 2V VCB= 500V; le= 0 VCE= 400V; IB= 0 VEB= 7V; I0= 0 lc=1A;VCE=10V MIN 410 TYP. MAX 0.7 1.5 0.1 0.1 1.0 UNIT V V V mA mA mA MHz Switching Times ton tstg tf Turn-On Time Storage Time Fall Time lc=4A; IB1=- IB2= 0.8A; RL= 50. ; VBB2= 4V 1.0 3.0 0.7 M s M s M s