2SC2292 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2292
DESCRIPTION
- With TO-3 package
- High speed ,high voltage
APPLICATIONS
- For high speed ,high voltage switching and DC-DC converter application PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A PT Total power dissipation T mb.25 80 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 /W Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2292 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage I C=4A; IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage I C=4A; IB=0.8A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE DC current gain I C=4A ; VCE=2V 15
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2292 PACKAGE OUTLINE Fig.2 Outline dimensions