2SC2270 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 DESCRIPTION ·
- With TO-126 package
- Low collector saturation voltage
- High collector power dissipation
APPLICATIONS
- Strobo flash applications
- Medimum power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-peak 8 A IE Emitter current (DC) -5 A IEM Emitter current-peak -8 A Ta=25℃ 1.0 PC Total power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 20 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 8 V VCEsat Collector-emitter saturation voltage I C=4A; IB=0.1A 1.0 V VBE Base-emitter voltage I C=4A ; VCE=2V 1.5 V ICBO Collector cut-off current V CB=40V; IE=0 0.1 μA IEBO Emitter cut-off current V EB=8V; IC=0 0.1 μA hFE-1 DC current gain I C=0.5A ; VCE=2V 140 450 hFE-2 DC current gain I C=4A ; VCE=2V 70 fT Transition frequency I C=0.5A ; VCE=2V 100 MHz COB Collector output capacitance I E=0;f=1MHz ; VCB=10V 40 pF hFE-1 Classifications A B C 140-240 200-330 300-450
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s